| 1. | Secondary ion mass spectrometry
二次离子质谱法 |
| 2. | Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials
表面化学分析.次级离子质谱法.利用均匀掺杂材料测定硅中硼原子浓度 |
| 3. | The conductivity , components and profile of the n - type diamond were characterized by hall effect , secondary ion mass spectrometry ( sims ) and the scanning electron microscopy ( sem )
通过hall效应，二次离子质谱( sims )及扫描电子显微镜( sem )等多种技术手段，对n -型金刚石薄膜的导电特性、成分和薄膜的形貌等方面进行了表征。 |
| 4. | In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported , and its typical applications in the hgcdte material and devices processing , especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced
摘要文章介绍了二次离子质谱仪的结构及其基本工作原理，并通过对典型应用的分析，介绍了二次离子质谱分析技术在高灵敏度碲镉汞红外焦平面探测器材料和器件制备工艺中的作用，特别是在结探监测和微量杂质监控方面所发挥的重要作用。 |
| 5. | The fabrication parameters were preliminarily optimized . the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ) . the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )
阐述了掺硼金刚石膜的制备工艺，研究了掺硼金刚石膜成核和生长的影响因素，初步优化了沉积掺硼金刚石膜工艺参数，同时对掺硼金刚石膜进行了扫描分析、拉曼分析、二次离子质谱分析和电阻率测试。 |
